G3S06504C
Part Number:
G3S06504C
Product Classification:
Single Diodes
Manufacturer:
Global Power Technology
Description:
DIODE SIL CARB 650V 11.5A TO252
Packaging:
-
ROHS Status:
No
Currency:
USD
Specification
- Mounting Type Surface Mount
- Technology SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max) 650 V
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Operating Temperature - Junction -55°C ~ 175°C
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package TO-252
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
- Current - Reverse Leakage @ Vr 50 µA @ 650 V
- Current - Average Rectified (Io) 11.5A
- Capacitance @ Vr, F 181pF @ 0V, 1MHz