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UJ3D06504TS
Part number:
UJ3D06504TS
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
UnitedSiC (Qorvo)
describe:
DIODE SIL CARB 650V 4A TO220-2
package:
Tube
ROHS status:
Yes
currency:
USD
BUY NOW add to cart
inventory 24375
minimum : 0
quantity
unit price
price
1
1.47
1.47
50
1.18
59
100
0.97
97
500
0.88
440
specifications
  • Mounting Type
    Through Hole
  • Technology
    SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Speed
    No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr)
    0 ns
  • Package / Case
    TO-220-2
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Current - Average Rectified (Io)
    4A
  • Supplier Device Package
    TO-220-2
  • Voltage - Forward (Vf) (Max) @ If
    1.7 V @ 4 A
  • Current - Reverse Leakage @ Vr
    25 µA @ 650 V
  • Capacitance @ Vr, F
    118pF @ 1V, 1MHz

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