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G3S06504C
Part number:
G3S06504C
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Global Power Technology
describe:
DIODE SIL CARB 650V 11.5A TO252
package:
ROHS status:
None
currency:
USD
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inventory 1630
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quantity
unit price
price
1
3.02
3.02
specifications
  • Mounting Type
    Surface Mount
  • Technology
    SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Speed
    No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr)
    0 ns
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Package / Case
    TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package
    TO-252
  • Voltage - Forward (Vf) (Max) @ If
    1.7 V @ 4 A
  • Current - Reverse Leakage @ Vr
    50 µA @ 650 V
  • Current - Average Rectified (Io)
    11.5A
  • Capacitance @ Vr, F
    181pF @ 0V, 1MHz

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